| 摘要 |
PURPOSE:To make a resist mask for etching which can perform precise transcrip tion by improving the adhesion of a positive resist pattern, concerning the formation method for a resist pattern excellent in adhesion. CONSTITUTION:In the manufacture of a thin film circuit device which uses a resist pattern 5b, being made by exposing and developing the positive resist 5a applied on the object 4 to be etched, as an etching mask, this process has to improve the adhesion with the base of the resist pattern 5b by reexposing the resist pattern 5b being made by exposure and development. |
