| 摘要 |
PURPOSE:To prepare a melting region selectively and to disperse impurity, by placing a substrate in doping gas atmosphere and applying laser or electronic beam onto it. CONSTITUTION:An Si substrate 14 is set on a substrate base 15, and a chamber 16 is filled with a doping gas 18. High-output laser beam 11 is applied to a prescribed portion of the substrate 14 to melt it by deflecting the beam, and in doing so, doping is done from the gas 18. As applying of the beam is stopped, the work is cooled rapidly and a pm joint 21 is formed. It is possible, by using this constitution, to form a joint in fine pattern with depth of approximately 1mum. |
