发明名称 PROCESS FOR PRODUCING A SILICIZED SILICON CARBIDE DIPPING FORMER
摘要 A process for making a ceramic dipping former from silicized silicon carbide by making an absorbent negative mold of the ceramic dipping former containing preparing a suspension containing at least two particle size fractions of silicon carbide, a binder and water and pouring the suspension into the absorbent negative mold, drying the suspension in the absorbent negative mold, opening the absorbent negative mold and removing a silicon carbide green body, and further drying and silicizing the green body in a drying oven at a temperature between approximately 1400 DEG C. to 1750 DEG C. under reduced pressure.
申请公布号 US5194204(A) 申请公布日期 1993.03.16
申请号 US19900472250 申请日期 1990.01.30
申请人 HOECHST CERAMTEC AKTIENGESELLSCHAFT 发明人 ADASCH, GUNTER;HUBER, JUERGEN
分类号 B29C33/38;B29C41/14;B29C41/40;C04B35/08;C04B35/565;C04B35/573;C04B35/581 主分类号 B29C33/38
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