| 摘要 |
PURPOSE:To enable Si to be controlled in amount of etching when a composite interlayer insulating film is etched by a method wherein a third insulating film is deposited while the overhang of a second insulating film previously deposited through a bias ECR method is etched. CONSTITUTION:A BPSG 5 previously deposited on an Si substrate S is annealed at a low temperature in an atmosphere of N2 gas. Then, an SiO 6 is deposited on the BPSG 5 through a bias ECR(electron cyclotron resonance) method to flatten the surface of the laminate. In this bias ECR method, a small bias voltage is applied to the Si substrate S, whereby an interlayer film can be flattened by depositing the SiO 6 as the sloping overhang of the BPSG 5 is etched. By this setup, Si can be controlled in amount of etching when a composite interlayer insulating film is etched.
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