| 摘要 |
<p>A thin-film transistor comprises an insulative substrate (11) and a thin-film transistor element (10) arranged on the substrate. The thin-film transistor element comprises, a gate electrode (12G), a gate-insulating film (13), an i-type semiconductor layer (14) to face the gate electrode through the gate insulating film therebetween, an n-type semiconductor layer (15), a source and drain electrodes (16S, 16D) electrically connected the portions of the i-type semiconductor layer through the n-type semiconductor layer, and an anodically oxidized film (15a) located between the source and drain electrodes to electrically isolate, said source and drain electrodes. <IMAGE></p> |
