| 摘要 |
PURPOSE:To fabricate a highly reliable semiconductor memory by preventing a storage node of a capacitor from being deformed and a semiconductor substrate from being contaminated with carbon. CONSTITUTION:A polycrystalline Si film 26 is formed over the entire surface of a more upper layer than a transistor 14, on which film 26 a SiO2 film 27 having an opening therethrough is formed. A polycrystalline Si film 33 is formed and a storage node of a capacitor 31 is formed with the use of the polycrystalline Si film 33 in the opening 32 and the polycrystalline Si film 26 located below the former. A higher etching selection ratio is ensured between the polycrystalline Si film 26 and the SiO2 film 27, so that there is no need of forming the opening 32 on an organic polyimide layer and the like. Accordingly, even if there is a need for a high temperature heat treatment upon formation of the polycrystalline Si film 33, the organic polyimide layer is prevented from being thermally deformed and carbon contamination is prevented. |
