| 摘要 |
PURPOSE:To provide the structure of a surface protective film generating no instability of the interface between the surface protective film and compound semiconductor such as GaAs. CONSTITUTION:A semiconductor device has a compound semiconductor, a plurality of electrodes 4, 6, 5 formed on the surface of the compound semiconductor 3, a silicon nitride film 7 covering the surfaces of the compound semiconductor among a plurality of the electrodes and having a refractive index of 2.2 or more and an insulating film 8 covering the silicon nitride film. Accordingly, unnecessary currents among the electrodes can be reduced while the compound semiconductor can be protected sufficiently, thus remarkably improving the reliability of the semiconductor device. |
