| 摘要 |
PURPOSE:To reduce the thickness of a film while maintaining the reliability of a gate oxide film and the resistance value of a gate electrode in the gate electrode of a polycide structure. CONSTITUTION:An insulating film 6 such as a silicon oxide film, a silicon nitride film, etc., is provided between a polycrystalline silicon film 4 and a WSi 5. The thickness of the film 4 is reduced without altering the thickness of a gate electrode itself, and the thickness of the WSi 5 is increased thereby to obtain the cross-sectional area of an upper layer film and to maintain a constant resistance value. |
