| 摘要 |
<p>PURPOSE:To provide a semiconductor substrate, which can be identified substrate identification marks made by ion-implantation free from recesses and projections, distortion and contamination, by a method wherein a clean process using an ion-implantation is used. CONSTITUTION:An Si semiconductor wafer 1, of which a semiconductor device is formed, is used and substrate identification marks, such as characters and marks for identifying the wafer 1 like the model number of the wafer 1, the mark of a crystal lot, a device product name, a device lot name and the like, are put on an identification part 2 of this wafer 1 by ion-implanting electrically inert impurity ions in the recognition part 2. These substrate identification marks are read, whereby the wafer 1 is identified.</p> |
