SOI SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF,申请号JP19910218982-传众专利搜索

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发明名称	SOI SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF
摘要
申请公布号	JPH0555359(A)	申请公布日期	1993.03.05
申请号	JP19910218982	申请日期	1991.08.29
申请人	FUJITSU LTD	发明人	TAKAOKA MATSUO
分类号	H01L21/02;H01L21/20;H01L21/205;H01L21/76;H01L21/762;H01L27/12	主分类号	H01L21/02
代理机构		代理人
主权项
地址

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