| 摘要 |
<p>A solid state, directly overwritable, non volatile, high speed, multibit single cell memory characterized by numerous stable, non volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration. There is also disclosed a unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level position while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. The memory elements are characterized by enhanced stability, achieved through the use of compositional modulation of the semiconductor material from which the memory elements are fabricated. The memory elements may include an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon. The memory elements (30) may be in the form of regions (36) of memory material surrounded by oxide layers (20, 39). The memory elements may be in the form of an array having access diodes formed between N type layers (18) and P type regions (24), with the elements located at the intersections of row lines formed by N + regions (12) and column lines (42).</p> |
