发明名称 Novolak resin compositions with high Tg and high sensitivity for photoresist applications.
摘要 <p>A water insoluble, aqueous alkali soluble novolak resin, process for producing such a novolak resin, a photoresist containing such a novolak resin, and a method for producing a semiconductor device, wherein the resin is obtained by condensing with formaldehyde a mixture of from about 30 to about 98 mol percent of meta-cresol, from about 1 to about 40 mol percent of 3,5-dimethylphenol and from about 1 to about 10 mol percent of a substituted or unsubstituted multihydroxy phenol.</p>
申请公布号 EP0529970(A1) 申请公布日期 1993.03.03
申请号 EP19920307658 申请日期 1992.08.21
申请人 HOECHST CELANESE CORPORATION 发明人 KHANNA, DINESH N.;DURHAM, DANA L.
分类号 C08G8/24;C08G8/12;G03F7/004;G03F7/023;G03F7/032;G03F7/038;G03F7/039 主分类号 C08G8/24
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