| 摘要 |
PURPOSE:To remove a compensating circuit, and to simplify circuit constitution and reduce an area used by composing one memory cell of a ROM by using an N channel transistor and a P channel transistor. CONSTITUTION:A word line is selected by an address signal input from an address input 10 in an address selector 101, divided into an inverting signal and a noninverting signal by inverters 110, 111, and connected to the gate electrode of a memory cell consisting of a P channel transistor and an N channel transistor. One ends of each source-drain region are connected to the same bit line in the memory cell, and only the source-drain region of the P channel transistor is bonded with a VDD power supply when a data, which must be stored in the address, is 1 and only the source-drain region of the N channel transistor with a VSS power supply when the data is 0 respectively at the other ends. Accordingly, a circuit is simplified and a circuit scale can be reduced. |
