| 摘要 |
PURPOSE:To stably reduce through hole resistance, by etching and eliminating an ARM film and metal for improving migration resistance in a through hole part, and constituting a through hole structure of (aluminum alloy)-(aluminum alloy). CONSTITUTION:When etching is ended at a time point that the whole part of a TiN film 8 is etched back, the TiN film 8 at the bottom part 9 of a through hole is etched and eliminated, and the surface of an aluminum alloy film 3 of a first layer lamination metal wiring o is exposed, the TiN film 8 of 500-1000Angstrom in thickness is left in the part except the through hole bottom part 9. By using an etching method having directivity, the TiN film 8 on the side wall part of the through hole 6 also is not eliminated but left. A second layer lamination metal wiring 10 of (Al-1%Cu) is grown on the whole surface, and worked in a specified pattern by lithography and etching processes. A structure of (aluminum alloy)-(aluminum alloy) is obtained, and the resistance value is stabilized to be low. |
