| 摘要 |
PURPOSE:To measure the concn. profile of the element in a semiconductor within a short time and to control the growth of a membrane in situ. CONSTITUTION:The optical data of a semiconductor is measured by ellipsometry and converted to an element concn. profile on reference to the data base of preliminarily accumulated optical data/composition data. By this constitution, the concn. profile of impurity is calculated and the composition file of a two- component type semiconductor during the growth of a membrane is hourly calculated to be fed back to a growing condition. |
