| 摘要 |
PURPOSE:To provide a Thin Film Transistor (TFT) wherein an ON current can be increased without increasing an OFF current, the formation time of a source region and a drain region can be shortened and it is possible to prevent impurity ions from breaking through regarding the structure of a semiconductor device, especially an insulated-gate thin-film transistor. CONSTITUTION:The title device is provided with an insulated-gate thin-film transistor wherein a channel region 6, a source region 5 and a drain region 7 are formed in a silicon thin film 4. The title device is constituted in such a way that said silicon thin film 4 is formed to be thin in the channel region 6 from the thin-film transistor and to be thicker in the source and drain regions 5, 7 than in the channel region 6. |
