发明名称 |
SEMICONDUCTION WAFER ADHERING METHOD |
摘要 |
PURPOSE:To enhance the flatness of a polished wafer remarkably by heating a vacuum suction jig up to a temp. approx. the same as a rotary disc for polishing, and thereby making uniform the thickness of an adhesive agent layer at the time of adhesion for provisional attachment. CONSTITUTION:At the time of polishing, a semiconductor wafer 5, it is provisionally attached to a rotary disc for polishing 6 with a thermoplastic adhesive 4. Therein a vacuum attraction jig 2 for attracting the wafer 5 and affixing to the rotary disc 6 is heated to a temp. approx. the same as that of the rotary disc 6 which has been heated. This makes uniform the temp. distribution over the wafer surface placed on the rotary disc 6 when the affixation is conducted and also makes uniform the melding velocity of the adhesive 4 to lead to generation of uniform thickness of the adhesive agent layer, which should enhance the flatness of the wafer 5 on the disc 6. This causes in turn a remarkable enhancement of the flatness of the polished wafer. |
申请公布号 |
JPH0538649(A) |
申请公布日期 |
1993.02.19 |
申请号 |
JP19910215833 |
申请日期 |
1991.07.31 |
申请人 |
KYUSHU ELECTRON METAL CO LTD;OSAKA TITANIUM CO LTD |
发明人 |
ASANO MASAYUKI;TAKAO YOSHIYUKI;OSHIMA FUMIHIRO;HIRAI NORIYOSHI |
分类号 |
B23Q3/08;B24B37/30;H01L21/304 |
主分类号 |
B23Q3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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