| 摘要 |
PURPOSE:To form a direct transition type semiconductor wherein the minimum energy position of a conduction band is situated in a point 0 and to obtain a modulation semiconductor material provided with new physical properties by a method wherein a specific structure is formed by sandwiching Ge between polar semiconductors. CONSTITUTION:A semiconductor material is provided with a laminated structure wherein polar semiconductor layers 1 and Ge layers 2 are laminated alternately and each of a plurality of Ge layers 2 is sandwiched between the polar semiconductor layers 1 such as GaAs or the like. A quantum well layer whose main component is Ge is sandwiched between quantum barrier layers; the thickness of the like of the quantum well layer is selected in such a way that the energy of a subband using a point 0 as the origin inside the quantum well layer becomes lower than the energy of a subband using a point L as the origin. Thereby, even when Ge, is used as the main component, it is possible to realize a modulation semiconductor material whose minimum energy of a conduction band exists in the point 0. |
