| 摘要 |
PURPOSE:To enhance moisture resistance proerties and extend life time by installing a plurality of GaAlAs layers, an electrode formed on the front surface and the rear surface of a semiconductor device respectively and a gallium oxide-containing thermal oxide formed on the inside of the surface which excludes the portion of the electrode. CONSTITUTION:There are installed a p-GaAlAs layer 1, which is a first GaAlAs layer, an n-GaAlAs layer 2 which is a second GaAlAs layer and a p-GaAlAs active layer 3 clamped with these two GaAlAs 1 and 2. An off-set portion 4 is installed on the peripheral edge of a semiconductor device which comprises these layers. There are installed an n-electrode 5 and a p-electrode 6 on the front surface and the rear surface of the semiconductor device respectively. A gallium-containing thermal oxide layer 7 is installed, centering on the surface of the device and an exposed off-set portion 4. More specifically, the thermal oxide layer 7 is formed inside the device, which oxidizes the internal part of the device surface to a satisfactory extent and produces a physical film. This construction makes it possible to enhance moisture resistant properties and life time properties. |
