ANTI-FUSE STRUCTURES AND METHODS FOR MAKING SAME

摘要

An anti-fuse structure characterized by a substrate (18), an oxide layer (46) formed over the substrate having an opening (48) formed therein, an amorphous silicon material (52) disposed within the opening and contacting the substrate, a conductive protective material (59), such as titanium tungsten, disposed over the amorphous silicon material, and oxide spacers (64) lining the walls of a recess formed within the protective material. The protective material and the spacers provide tighter programming voltage distribution for the anti-fuse structure and help prevent anti-fuse failure.