Resist pattern coating on substrate by deep UV lithography - comprises coating substrate with anti-reflection coating contg. new organo:silane cpd., applying resist, and selectively exposing

摘要

Prodn. of a resist pattern (100) on a substrate (1) (2) by deep UV (DUV) lithography is carried out in stages, comprising (a) preparing an organic silane (II) (I) for producing an antireflection coat on (I), which has (a-1) a labile gp. attached to a Si atom, which can be replaced by a OH gp. on the surface of (I), forming a covalent bond between (I) and (II), and (a-2) a substit. attached to the Si atom which absorbs DUV light; (b) coating (I) with (II); (c) applying a resist (3); (d) selective exposure of the resist with DUV light (pref. excimer laser light); and (e) developing the resist. The organic silanes (II) with these substits. are also new. (I) is pref. a semiconductor. (II) is an aminosilane cpd. of formula (IIA): R1-4 = H or alkyl, pref. H, Me or Et; R = a gp. absorbing DUV light, pref. a novolak resin, esp. a novolak resin in which 30-70% of the OH gps. are masked with a t-butoxycarbonyl gp. or an organic colorant, pref. a coumarin deriv., esp. curcumine. (III) is of the negative chemical enhancement type. USE/ADVANTAGE - The coating minimises intralayer multiple reflections, even when a commercially available resist of the negative chemical enhancement type is used. Systems of this type are used in the prodn. of 64 MBit DRAMs.