NONVOLATILE SEMICONDUCTOR MEMORY

摘要

PURPOSE:To provide a nonvolatile semiconductor memory enabling of smooth high-speed reading by negligibly shortening the dead time occurring at a switching time of the word line. CONSTITUTION:Column reading for the data of a memory cell selected with one word line WL stored in a sense amplifier circuit 3 having a latching function provided with each bit line BLj is carried out. During this time, between the bit line BLj and the sense amplifier circuit 3 is cut-off by a bit line transfer gate Qj2 and a timing control is carried out such that reading of the bit line BLj of the data of the memory cell selected by the next word line WL is simultaneously carried out.