SEMICONDUCTOR SENSOR

摘要

PURPOSE:To enable a high output to be obtained even with a small rate of change in the physical quantity of a measurement object. CONSTITUTION:This sensor comprises CMOS inverters 7 and 8 which are provided on one output end and the other output end, respectively, of a bridge circuit B constituted of a plurality of gauge resistors 2-5 and whose bias voltage is so set that the range of changes in output voltage on each output end of the bridge circuit B may enter the linear zone of input/output transmission characteristics.