| 摘要 |
<p>In a method for exposing a pattern plate having an alignment pattern, the positional relationship between the alignment pattern and the device pattern is controlled with high accuracy. When exposing a device pattern (B) such as reticle pattern or shadow mask pattern and alignment patterns (A1, A2 and A3), the alignment patterns (A1, A2 and A3) are exposed at least before exposing the device pattern (B), and the alignment patterns (A1, A2 and A3) are overlap-exposed again after the device pattern has been exposed. The exposure can be an electron beam or optically. Thus it is possible to almost perfectly correct relative positional deviation between the alignment patterns, which change depending upon exposure time during exposure of the device pattern, and the device pattern, and to reduce the worsening of positional accuracy of exposure, which changes according to pattern size. <IMAGE></p> |
