| 摘要 |
<p>PURPOSE:To contrive the simplification of a step of forming a photocoupling type semiconductor switch by integrating a PNPN element, transistor, diode and resistor regions with the light emitting element on a semiconductor substrate and isolating the respective element regions with a P-N junction, thereby improving the dv/dt characteristics. CONSTITUTION:The P type gate region 15(16) and anode region 17 of a light receiving PNPN element 6(7) corresponding to a gate input light emitting element 3 are diffused on an N type semiconductor substrate 18, and a cathode region 23 is diffused in the P type gate region 15(16). Then, the same conductivity type gate and cathode resistors 8, 9 are formed as its extension in the region 15(16). Transistors 11, 12 connected to the diodes 13, 14 are in lateral structure, the isolation between the elements is conducted with P-N junction, and the collector and emitter are connected in parallel with the resistors 8, 9 respectively. Since the respective element regions are isolated with P-N junction, it can improve the dv/dt withstand characteristics intrinsic for the PNPN structure and can simplify the step of fabricating the switch.</p> |
