| 摘要 |
PURPOSE:To eliminate the defect of a pin hole by forming a thermal oxide film of SiO2 on an Si substrate based on a thermal oxidation method and an SiO2 film further thereon based on a CVD method, then implanting fluorine ions into the two SiO2 layers, carrying out high temperature heat treatment and terminating the free bonds of Si. CONSTITUTION:A thermal oxide film 2 of SiO2 is formed on a Si substrate based on a thermal oxidation method. An SiO2 film 4 is formed on the thermal oxide film 2 based on a CVD method. Then, fluorine ions 5 are implanted thereinto and subjected to high heat treatment under an environment which contains only nitrogen gas. The SiO2 film and Si unconnectors in the interface between this SiO2 film and a thermal oxide film are terminated. This construction makes it possible to reduce a defect density of a large area gate insulation film dramatically and enhance the number of passed device when it is employed in a large capacity MOS memory. |
