| 摘要 |
PURPOSE:To prevent the destruction of a dielectric film of a gate oxide film, and to alleviate the concentration of electric fields by employing a field plate structure in which a source electrode is formed of a polycrystalline silicon. CONSTITUTION:A first drain electrode 13a is formed by embedding a drain electrode contact hole. A first source electrode 14a is laid over a non-doped polycrystalline silicon 8 and a P-doped polycrystalline silicon 7. An Al-based interconnection is then sintered, so that ohmic contacts are formed between the first drain electrode 13a and an n<+>-type diffusion layer 12 and between the fist source electrode 14a and the same. Another ohmic contact is formed between the non-doped polycrystalline silicon 8 and the p-doped polycrystalline silicon 7 and the first source electrode 14a. Hence, the non-doped polycrystalline silicon 8 and the Pdoped polycrystalline are rendered at the same potential as the first source electrode 14a, and they can have the effect as a field plate. Hot carriers generated just below the gate electrode 5 of the drain-side n-type diffusion layer 3 can prevent the destruction of the gate oxide film 4. |
