| 摘要 |
<p>PURPOSE:To reduce the thickness of a silicon thin film constituting a channel portion or a gate electrode by forming a barrier metal after the opening of a contact hole. CONSTITUTION:After the opening of contact holes 511, titanium 512 and titanium nitride 513 are, in order, deposited over the contact hole. An aluminum thin film 514 is then deposited over them. A resist pattern 515 is then formed. Using this pattern as a mask, the aluminum thin film 514, titanium nitride 513, and titanium 512 are selectively etched to form a source interconnection 516, a drain interconnection 517, and a gate interconnection. The resist pattern 515 is then removed to form a thin-film transistor. Thus, it is possible to reduce the thickness of a silicon thin film constituting a channel portion or a gate electrode without contact failures, the increase of process, and the failure due to insufficient breakdown voltage.</p> |
