| 摘要 |
<p>PURPOSE:To enable a resin sealed semiconductor device to be enhanced in reliability even if it is used under corrosive environment by a method wherein an organic film is applied onto only the objective part of the lead frame and the conductive surface of the semiconductor device on an industrial level. CONSTITUTION:Electrodeposition resist is applied onto all the surface of a semiconductor element through an eletrolytic method excluding bonding pads on the semiconductor element, bonding wires, and the tips of the outer leads and the inner leads of a lead frame 1 to seal up the semiconductor element resin. In an electrodeposition device 10, a resin sealed semiconductor device 10 is dipped into an electrolytic cell 15 filled with electrodeposition resist solution 14, and the resin sealed semiconductor device 10 as an anode and a stainless steel plate as a counter electrode are connected to a direct current power source 13. By this setup, an organic film can be deposited only on the specific target part of a semiconductor device, which is conducive to the enhancement of the semiconductor device in electrical properties and moisture resistance from a constitutional viewpoint of this structure.</p> |
