| 摘要 |
PURPOSE:To provide a non-volatile memory which is easy and fast to rewrite data and suitable for high integration. CONSTITUTION:One electrode E1 of a ferroelectric capacitor Z1 connected with a bit line BL by way of an NMOS transistor N1 while the other electrode E2 of the ferroelectric capacitor Z1 is connected with a drive line, thereby constituting a memory cell and the drive line DL is connected with the word line WL by way of a delay circuit. Two bit lines are installed to a row of memory cells out of the memory cells arranged in the shape of a matrix. The memory cells are distributed to the two bit lines and connected with each other. |
