| 摘要 |
In a plasma processing device a plasma generation chamber communicates with a processing chamber holding a substrate. A first solenoid is disposed around the generation chamber in a coaxial relationship therewith and a second solenoid is disposed near the substrate. Processing includes generating a gas plasma by flowing a gas into the generation chamber, introducing microwave radiation into the chamber and controlling the first solenoid current to produce a magnetic field in the generation chamber. In particular, the value of a magnetic flux density at any point on a plane perpendicular to an axis of the first solenoid at a lengthwise midpoint is made to be higher than 1.01 times the value of the magnetic flux density satisfying the electron cyclotron resonance condition. And the value of the magnetic flux density at any point on a plane perpendicular to the axis of the first solenoid at an end is made to be lower than 0.99 times the value of the magnetic flux density satisfying the electron cycltoron resonance condition. Plasma is extracted from the generation chamber along lines of magnetic force produced by the first solenoid into the processing chamber and is directed onto a surface of the semiconductor substrate along lines of magnetic force of a cusp-shaped magnetic field produced by the second solenoid so that the plasma processes the surface of the semiconductor substrate.
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