| 摘要 |
<p>PURPOSE:To provide an amorphous ferroelectric material usable as thin-film capacitor element, ferroelectric memory, electrooptical device, etc., and to provide a process for producing the material. CONSTITUTION:The objective material consists of a ternary oxide having amorphous structure and is composed mainly of a transition metal oxide (M2O3)- aluminum oxide (Al2O3)-YMnO3 compound (ABO3), wherein M2O3 is at least one kind of oxide selected from the oxides of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Y, Zr, Nb, Mo, Pd, Hf, Ta, W, In and lanthanoid elements and ABO3 is a YMnO3-type compound exhibiting ferroelectricity, antiferroelectricity or paraelectricity.</p> |
