| 摘要 |
PURPOSE:To minimize the change in the transistor characteristics due to piezo effect by coinciding the channel direction of a P type channel field effect transistor with <100> direction. CONSTITUTION:The channel of the P type channel field effect transistor formed on the main surface of a silicon monocrystalline substrate 1 is directed in <100> direction. Source 3, gate electrode 5 and drain 4 are so disposed, for example, in a <100> direction being 45 deg. with respect to the orientation flat part 2 in a 100 direction of the silicon monocrystalline substrate 1 having (100) plane so that the channel direction coincides with the <100> direction. |
