MANUFACTURE OF SEMICONDUCTOR LASER

摘要

PURPOSE:To reduce deterioration of quality of a crystal near a boundary and to obtain excellent characteristics by growing a Ga0.5In0.5P in an upper clad layer, and using the P-type layer as an etching preventive layer when a stripe groove is formed. CONSTITUTION:In the first growing step, a lower clad layer 104, an active layer 105, an upper clad layer 106, an etching preventive layer 107 made of Ga0.5In0.5P which can be removed by a re-evaporation, and a block layer 108 are sequentially laminated on a semiconductor substrate 101. Further, it is etched to form a stripe. Then, the layer 107 is evaporated. In the second growing step, a contact layer 201 is laminated. Thus, a visible semiconductor laser having a buried structure can be manufactured by utilizing the GaInP layer having both a role of an etching preventive layer and a role of a protective film.