发明名称 Josephson device
摘要 A transistor structure which utilizes the Josephson effect and/or tunneling effect. The Josephson transistors of the invention are composed of superconductive films and tunneling films and work at a high speed with a low energy consumption. They are suitable for the construction of integrated circuits, especially digital circuits.
申请公布号 US5179426(A) 申请公布日期 1993.01.12
申请号 US19880226606 申请日期 1988.08.01
申请人 SEIKO EPSON CORPORATION 发明人 IWAMATSU, SEIICHI
分类号 H01L39/22 主分类号 H01L39/22
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