发明名称 Apparatus for depositing material into high aspect ratio holes
摘要 A sputter deposition system includes a hollow, cylindrical sputter target 14 disposed between an end sputter target 12 and a substrate 19, all of which are contained in a vacuum chamber 20. A plurality of magnets 24 are disposed outside the chamber 24 to create intense, plasma regions 48 near the interior surface of the cylindrical target 14 and thereby causing ionization of sputtered neutrals. Rf power is inductively coupled into the chamber 24 through rf coil 16 to sustain the plasma and substrate 19 is electrically biased to control ion directionality and energy.
申请公布号 US5178739(A) 申请公布日期 1993.01.12
申请号 US19910765651 申请日期 1991.09.25
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BARNES, MICHAEL S.;FORSTER, JOHN C.;KELLER, JOHN H.
分类号 C23C14/34;C23C14/35;H01J37/34 主分类号 C23C14/34
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