| 摘要 |
A semiconductor device for a high-power output amplifier and having a substrate (4) with a reduced thickness, an electrode for heat radiation being provided on the rear surface of the substrate, includes a metallized pattern (13) produced by a metal plating layer surrounding the periphery of the element, the side surface of the element, and the electrode for heat radiation except for the neighborhood of high-frequency input/output portions (8,9). Therefore, it is possible to prevent the element from becoming fatally defective because of small cracks and chipping due to die-bonding operation. Also the soft soldering material climbing onto the surface of the element can be prevented from contacting the metal film at the input/ output portions. Furthermore, short-circuiting does not arise during wire-bonding, thereby enabling to enhance the yield at assembly and the reliability of the element, and to reduce the production cost. <IMAGE> |
