Thin-film capacitor in semiconductor integrated circuit device, and method of manufacture thereof.

摘要

A method for fabricating a thin-film capacitor for a semiconductor integrated circuit device includes steps of forming a barrier metal layer (107), forming a dielectric film (108), forming an interlayer insulating film (109), exposing the dielectric film (108) and forming an upper electrode (110). The thin-film capacitor is fabricated by successively depositing the dielectric film and the upper electrode on a lower electrode (106). The dielectric film is made of a material having a high permittivity such as SrTiO3. The interlayer insulating film is left at side portions of the lower electrode and the dielectric film. In one aspect of the invention, even if the high permittivity film becomes thin at the side and end portions of the lower electrode, the interlayer insulating film can suppress an increase in a leakage current. In another aspect of the invention, the high permittivity film and lower electrode may be etched successively and collectively and an upper electrode is deposited thereon. It is possible to suppress an occurrence of short-circuiting of the electrodes and an increase in the leakage current at the side portions of the high permittivity film. <IMAGE>