| 摘要 |
A compound semiconductor MIS FET includes a channel layer produced on a semi-insulating substrate with an intervening buffer layer, source and drain electrodes produced directly on a predetermined region of the channel layer, and a Schottky barrier gate electrode produced on the channel layer between the source and drain ohmic electrodes and on an undoped semiconductor layer. A production method for such a compound semiconductor MIS FET includes removing by etching undoped semiconductor layer at source and drain electrode production regions to expose a channel layer existing therebelow before producing the source and drain electrodes, and producing ohmic electrodes on the exposed channel layer and producing a Schottky barrier gate electrode between the source and drain electrodes on the undoped layer.
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