发明名称 |
SOI diaphgram sensor |
摘要 |
The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.
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申请公布号 |
US5177661(A) |
申请公布日期 |
1993.01.05 |
申请号 |
US19920847690 |
申请日期 |
1992.03.06 |
申请人 |
KOPIN CORPORATION |
发明人 |
ZAVRACKY, PAUL M.;MORRISON, JR., RICHARD H. |
分类号 |
G01L9/04;G01L9/00;G01P15/08;G01P15/12 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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