Deep UV light sensitive positive photoresist compositions.

摘要

Positive photoresist compositions are disclosed, which comprise an admixture of: a) 1 to 25% of a latent photoacid; b) 10 to 40% of a film forming polymer; c) 1 to 40% of an organic additive having the structural formula: <CHEM> d) a suitable solvent. A method for producing a semiconductor device by coating a substrate with the positive photoresist composition is also disclosed.