发明名称 Pseudo bi-phase charge coupled device having narrow channel effect
摘要 There is provided a pseudo bi-phase CCD having improved transmission efficiency that is easy for high-integration and can be designed by a simple process. The pseudo bi-phase CCD of the present invention has a gate electrode width which is reduced in a direction opposite to charge transmission direction in a gate electrode. In a charge coupled device having a plurality of gate electrodes formed on a semiconductor through which charges are transferred, the gate electrodes being separated by an insulation film, each of the gate electrodes includes a first part having a first width and a second width which is wider than the first width, the first width gradually increasing as it moves towards the second width formed in a direction of the charge transfer and a second part coupled to the first part, disposed in the charge transfer direction, the second part having the same width as the second width.
申请公布号 US5175602(A) 申请公布日期 1992.12.29
申请号 US19910653723 申请日期 1991.02.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAM, JEONG-HYUN
分类号 H01L29/762;H01L21/339;H01L29/768 主分类号 H01L29/762
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