| 摘要 |
PCT No. PCT/DE88/00357 Sec. 371 Date Feb. 15, 1989 Sec. 102(e) Date Feb. 15, 1989 PCT Filed Jun. 15, 1987 PCT Pub. No. WO88/10475 PCT Pub. Date Dec. 29, 1988.The bar code (Sk) for marking semiconductor surfaces includes a plurality of parallel bar elements (Se) having identical widths (b), wherein every bar element (Se) is formed as a series of overlapping softmark melting points (SSp) produced by means of laser bombardment to a depth of less than 2 u m. Narrow bars (sSt) are preferably formed by means of one bar element (Se) and wide bars (bSt) are preferably formed by means of two bar elements (Se) which are applied at a slight distance (a) relative to one another. The process for marking semiconductor surfaces with this bar code includes producing by laser bombardment with a softmark technique a plurality of parallel bar elements (Se). Each bar element is formed by a series of overlapping softmark melting points (SSp). The melting points (SSp) of the bar elements (Se) are applied at a depth of less than 2 micrometers, and the laser bombardment is controlled with respect to time so that, when producing one of the softmark melting points (SSp), the previously produced softmark melting point is at least partially hardened again.
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