发明名称 METHOD OF FORMING SION FILM
摘要 PURPOSE:To improve alignment accuracy by eliminating alignment error even if SiON remains on alignment marks. CONSTITUTION:An SiON film is formed on a substrate by CVD using a reaction gas composed of silane-containing gas, oxygen-containing gas, and nitrogen- containing gas. The composition of the reaction gas is adjusted so that the reflectivity of the SiON film may substantially be equal to that of a resist film to be formed thereon. Preferably, the silane-containing gas is SiH4, the oxygen-containing gas is O2, and the nitrogen-containing gas is N2.
申请公布号 JPH04372132(A) 申请公布日期 1992.12.25
申请号 JP19910176110 申请日期 1991.06.20
申请人 SONY CORP 发明人 OGAWA TORU
分类号 H01L21/318;H01L21/027 主分类号 H01L21/318
代理机构 代理人
主权项
地址