发明名称 SPUTTERING APPARATUS
摘要 PURPOSE:To adsorb the gas generating during sputtering and to obtain a good sputtered film, by providing in the neighborhood of the target a trap adsorbing the harmful gas in the sputtering room. CONSTITUTION:A sputtering room 2 is evacuated to a high vacuum by a vacuum pump 1 and an inert gas 7 is introduced into the room 2 by opening a valve 3 and then, the room 2 is regulated at a prescribed pressure by a valve 4. A gas 7 is ionized by applying voltage to the space between a target 5 and anode 6 by an electric power source 12 and attracted by the target 5 to drive out a metal 8 which is stuck to a substrate 9 as sputtered film. On this occasion, a secondary electron 10 and gas 11 etc. are generated together with the metal 8 by allowing an ionized inert gas 7' to collide against the target 5. Said generated gas 11 is removed by adsorbing to the surface of a low temperature trap 13. The trap 13 is cooled to a low temperature by introducing extremely low temperature liquid such as liquid nitrogen from a valve 15.
申请公布号 JPS5669371(A) 申请公布日期 1981.06.10
申请号 JP19790145659 申请日期 1979.11.09
申请人 NIPPON ELECTRIC CO 发明人 OOSAKI MINORU
分类号 C23C14/34;C23C14/56;H01L21/203;H01L21/285 主分类号 C23C14/34
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