| 摘要 |
<p>A monolithic semiconductor component including a P-type body and an N-type body having an interface with each other, in which a part of the P-type body and a part of the N-type body are the inner P and N regions of a PNPN device, another part of the P-type body and another part of the N-type body are the P and N regions of a PN diode, and the part of the N-type body in the PNPN device is thicker than the part of that body in the PN diode, where thickness is measured in the direction of current flow through the N-type body.</p> |
