Voltage variable capacitor

摘要

A voltage variable capacitor (10) has as the base substrate a silicon wafer with a layer of high resistivity semiconductor material on top of the substrate. An insulating layer (16) of a metal oxide having a dielectric constant greater than the dielectric constant of the semiconductors (12), such as zirconium titanate, is formed on top of the high resistivity layer, and a metal electrode (18) is formed on the insulating layer (16). When the electrode is energized, a depletion layer (20) is formed in the high resistivity layer. By varying the voltage applied to the electrode, the capacitance of the device is altered.