发明名称 |
STABILIZATION OF AMORPHOUS SEMICONDUCTORS |
摘要 |
An amorphous semiconductor film is prepared by the usual procedure and, then, stabilized by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode. |
申请公布号 |
CA1311861(C) |
申请公布日期 |
1992.12.22 |
申请号 |
CA19890614058 |
申请日期 |
1989.09.28 |
申请人 |
YAMAGISHI, HIDEO |
发明人 |
YAMAGISHI, HIDEO;NEVIN, WILLIAM A.;NISHIO, HITOSHI;MIKI, KEIKO;TSUGE, KAZUNORI;TAWADA, YOSHIHISA |
分类号 |
H01L31/0376;H01L31/20 |
主分类号 |
H01L31/0376 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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