发明名称 ELECTRODE FORMATION METHOD AND MOUNTING METHOD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide the electrode structure and the mounting structure, of a semiconductor device, wherein the semiconductor device and a circuit board can be connected easily and with good reliability. CONSTITUTION:In a mounting method, the upper part of an aluminum electrode pad 2 on an IC substrate 1 for a semiconductor device is provided with a protrusion-shaped bump electrode 3, a low-melting-point alloy foil 5 is brought into contact with the top part of the bump electrode 3, the IC substrate 1 is heated, a low-melting-point alloy bonded layer 8 is formed only on the bump electrode 3 and the semiconductor device is connected electrically to a terminal electrode on the circuit board via the bonded layer 8. When the bonded layer is formed by a transfer operation, it is possible to avoid the contamination of the semiconductor device, the spread of the bonded layer can be regulated by the protrusion-shaped bump electrode 3, and a bonding operation at a fine pitch can be realized.
申请公布号 JPH04369227(A) 申请公布日期 1992.12.22
申请号 JP19910145868 申请日期 1991.06.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 BESSHO YOSHIHIRO;NAKATANI SEIICHI
分类号 H01L21/60;H01L21/321 主分类号 H01L21/60
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