| 摘要 |
PURPOSE:To enable a thin film solar cell to be easily controlled in composition and lessened in optical gap by a method wherein a I element layer is formed on a substrate, and a I-III-VI2 compound or a III-V compound layer is laminated thereon keeping the substrate at a higher temperature. CONSTITUTION:An Cu layer 5 is evaporated on a glass substrate 1, and an CuInSe2 layer 21 where the ratio Cu/In is 0.7 is laminated thereon keeping the substrate 1 at a temperature of 300-550 deg.C. In this case, it is preferable to protect an interface against contamination that the Cu layer 5 and the CuInSe2 layer 21 are successively evaporated in the same evaporation vessel. That is, the substrate 1 is housed in the evaporation vessel provided with three evaporation sources of Cu, In, and Se, first of all only the evaporation source of Cu is heated to evaporate a Cu layer, and then all the evaporation sources are heated to evaporate a CuInSe2 layer. By this setup, the CuInSe2 layer 21 where the ratio Cu/In is 1.1 and which is induced by the diffusion of Cu and a CuInSe2 layer 22 where the ratio Cu/In is 0.7 and Cu is not diffused can be formed, and the layer 21 is three times as thick as the layer 22. |
